The TS64MSQ64V6M is a 32M x 64bits DDR2-667 SO-DIMM. The TS64MSQ64V6M consists of 8pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS64MSQ64V6M is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features
-RoHS compliant products.
-JEDEC standard 1.8V ± 0.1V Power supply
-VDDQ=1.8V ± 0.1V
-Max clock Freq: 333MHZ
-Posted CAS
-Programmable CAS Latency: 3,4,5
-Programmable Additive Latency :0, 1,2,3 and 4
-Write Latency (WL) = Read Latency (RL)-1
-Burst Length: 4,8(Interleave/nibble sequential)
-Programmable sequential / Interleave Burst Mode
-Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
-Off-Chip Driver (OCD) Impedance Adjustment
-MRS cycle with address key programs.
-On Die Termination
-Serial presence detect with EEPROM
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Description
Product Features:
- 0.5 GB DDR2 667 MHz
- 200-pin SO-DIMM
- CAS latency: 5
- 1.8 V
Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory memory module 0.5 GB
512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16
Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory, 0.5 GB, DDR2, 667 MHz, 200-pin SO-DIMM
Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory. Internal memory: 0.5 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 5
Specification
Features
CAS latency
5
Internal memory
0.5 GB
Internal memory type
DDR2
Memory clock speed
667 MHz
Memory form factor
200-pin SO-DIMM
Memory bus
64 bit
Memory voltage
1.8 V