Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
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Description
Product Features:
- JEDEC standard 1.2V ± 0.06V power supply
- High energy efficiency
- 8 bit pre-fetch
- Burst Length: 4, 8
- 16 Banks (4 Bank Groups)
- Support DBI mode
- Support Command/Address parity detection
- Support Data Cyclic Redundancy Check (CRC) for improved data reliability
- On-die termination with ODT pin
- Serial presence detect with EEPROM
- 100% tested for stability, compatibility and performance
- 4 GB DDR4 2133 MHz
- 260-pin SO-DIMM 1 x 8 GB
- CAS latency: 15
- 1.2 V
- ECC
Warranty: Limited Lifetime
Transcend DDR4-2133 ECC SO-DIMM 4GB
Transcend DDR4, 2133 MHz, 4GB, ECC SO-DIMM, 1Rx8, (512Mx8)x9, 1.2V, 30 µ”
Transcend DDR4-2133 ECC SO-DIMM 4GB, 4 GB, 1 x 8 GB, DDR4, 2133 MHz, 260-pin SO-DIMM
Transcend DDR4-2133 ECC SO-DIMM 4GB. Internal memory: 4 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2133 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 15, ECC
Specification
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
15
Internal memory
4 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR4
Memory clock speed
2133 MHz
Memory form factor
260-pin SO-DIMM
ECC
Memory ranking
1
Memory voltage
1.2 V
Operational conditions
Operating temperature (T-T)
0 - 85 °C