The TS256MSQ64V8P is a 256M x 64bits DDR2-800 SO-DIMM. The TS256MSQ64V8P consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS256MSQ64V8P is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features:
• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply.
• VDDQ=1.8V ± 0.1V.
• Max clock Freq: 400MHZ; 800Mb/s/Pin.
• Posted CAS.
• Programmable CAS Latency: 4,5,6.
• Programmable Additive Latency :0, 1,2,3 and 4.
• Write Latency (WL) = Read Latency (RL)-1.
• Burst Length: 4,8(Interleave/nibble sequential).
• Programmable sequential / Interleave Burst Mode.
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
• Off-Chip Driver (OCD) Impedance Adjustment.
• MRS cycle with address key programs.
• On Die Termination.
• Serial presence detect with EEPROM.
