The TS256MLK72V3N is a 256M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS256MLK72V3N consists of 9pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS256MLK72V3N is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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Description
Product Features:
- 2 GB DDR3
- 240-pin DIMM 1 x 2 GB
- CAS latency: 9
- 1.5 V
- ECC
Transcend 2GB DDR3 240Pin Long-DIMM DDR3-1333 ECC Unbuffer Memory memory module 1 x 2 GB
2GB, DDR3, SDRAM, CL9, ECC, Unbuffered, 240-pin UDIMM, 256Mx8
Transcend 2GB DDR3 240Pin Long-DIMM DDR3-1333 ECC Unbuffer Memory, 2 GB, 1 x 2 GB, DDR3, 240-pin DIMM
Transcend 2GB DDR3 240Pin Long-DIMM DDR3-1333 ECC Unbuffer Memory. Internal memory: 2 GB, Memory layout (modules x size): 1 x 2 GB, Internal memory type: DDR3, Memory form factor: 240-pin DIMM, CAS latency: 9, ECC
Specification
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
9
Internal memory
2 GB
Memory layout (modules x size)
1 x 2 GB
Internal memory type
DDR3
Memory form factor
240-pin DIMM
ECC
Memory voltage
1.5 V
Module configuration
256M x 8
Weight & dimensions
Width
133.3 mm
Depth
30 mm