The TS1333KLU-6GK, a triple channel kits, consists of 3pcs 2GB DDR3 SDRAM module. The 2GB module is a 256M x 64bits DDR3-1333 unbuffered DIMM. The 2GB module consists of 16pcs 128Mx8 bits DDR3 SDRAMs in 78 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The 2GB module is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
