The TS1333KLU-3GK, a triple channel kits, consists of 3pcs 1GB DDR3 SDRAM module. The 1GB module is a 128M x 64bits DDR3-1333 unbuffered DIMM. The 1GB module consists of 8pcs 128Mx8bits DDR3 SDRAMs in 78 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The 1GB module is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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Description
Product Features:
- 3 GB DDR3 667 MHz
- 240-pin DIMM 3 x 1 GB
- CAS latency: 6
- ECC
Transcend 3GB DDR3 240Pin Long-DIMM DDR3-1333MHz Triple Channel Kit Memory memory module 3 x 1 GB 667 MHz ECC
3GB DDR3 240Pin Long-DIMM DDR3-1333MHz Triple Channel Kit Memory
Transcend 3GB DDR3 240Pin Long-DIMM DDR3-1333MHz Triple Channel Kit Memory, 3 GB, 3 x 1 GB, DDR3, 667 MHz, 240-pin DIMM
Transcend 3GB DDR3 240Pin Long-DIMM DDR3-1333MHz Triple Channel Kit Memory. Internal memory: 3 GB, Memory layout (modules x size): 3 x 1 GB, Internal memory type: DDR3, Memory clock speed: 667 MHz, Memory form factor: 240-pin DIMM, CAS latency: 6, ECC
Specification
Features
CAS latency
6
Internal memory
3 GB
Memory layout (modules x size)
3 x 1 GB
Internal memory type
DDR3
Memory clock speed
667 MHz
Memory form factor
240-pin DIMM
ECC
Other features
Data transfer rate
1333 Mbit/s