For support call us at
+442037470227

Transcend TS128MSQ64V8P Memory Module Computer Component

Product Name: 1GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8

Brand:Transcend

Part Number (MPN): TS128MSQ64V8P

Categories: Memory Modules

CPIN:281931

£48.51
Per unit, single order
Ordering multiple units? Get a custom quote.

Reviews

0.0

0

Reviews

5 Star
4 Star
3 Star
2 Star
1 Star

Loading...

Description

Product Features:

  • 1 GB DDR 400 MHz
  • 200-pin SO-DIMM 1 x 1 GB
  • CAS latency: 4
  • 1.8 V

Transcend 1GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8 memory module 1 x 1 GB DDR 400 MHz

1GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8

The TS128MSQ64V8P is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8P consists of 8pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V8P is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features:
- RoHS compliant products.
- JEDEC standard 1.8V ± 0.1V Power supply.
- VDDQ=1.8V ± 0.1V.
- Max clock Freq: 400MHZ; 800Mb/s/Pin.
- Posted CAS.
- Programmable CAS Latency: 4,5,6.
- Programmable Additive Latency :0, 1,2,3 and 4.
- Write Latency (WL) = Read Latency (RL)-1.
- Burst Length: 4,8(Interleave/nibble sequential).
- Programmable sequential / Interleave Burst Mode.
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
- Off-Chip Driver (OCD) Impedance Adjustment.
- MRS cycle with address key programs.
- On Die Termination.
- Serial presence detect with EEPROM.

Transcend 1GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8, 1 GB, 1 x 1 GB, DDR, 400 MHz, 200-pin SO-DIMM

Transcend 1GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8. Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR, Memory clock speed: 400 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 4

Specification

Features

CAS latency
4
Internal memory
1 GB
Memory layout (modules x size)
1 x 1 GB
Internal memory type
DDR
Memory clock speed
400 MHz
Memory form factor
200-pin SO-DIMM
Memory voltage
1.8 V

Other features

Supported data transfer rates
800Mb/S/Pin