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Transcend TS128MSQ64V6J Memory Module Computer Component

Product Name: 1024MB, DDR2, PC5300, soDIMM 200-pin, 64Mx8, CL5

Brand:Transcend

Part Number (MPN): TS128MSQ64V6J

GTIN (EAN/UPC): 0760557798293

Categories: Memory Modules

CPIN:82141

£45.27
Per unit, single order
Ordering multiple units? Get a custom quote.

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Description

Product Features:

  • 1 GB DDR2 667 MHz
  • 200-pin SO-DIMM 1 x 1 GB
  • CAS latency: 5
  • 1.8 V

Transcend 1024MB, DDR2, PC5300, soDIMM 200-pin, 64Mx8, CL5 memory module 1 GB 1 x 1 GB 667 MHz

1024MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V, CL5, 64Mx8

The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features
-RoHS compliant products.
-JEDEC standard 1.8V ± 0.1V Power supply
-VDDQ=1.8V ± 0.1V
-Max clock Freq: 333MHZ; 667Mb/s/Pin.
-Posted CAS
-Programmable CAS Latency: 3,4,5
-Programmable Additive Latency :0, 1,2,3 and 4
-Write Latency (WL) = Read Latency (RL)-1
-Burst Length: 4,8(Interleave/nibble sequential)
-Programmable sequential / Interleave Burst Mode
-Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
-Off-Chip Driver (OCD) Impedance Adjustment
-MRS cycle with address key programs.
-On Die Termination
-Serial presence detect with EEPROM

Transcend 1024MB, DDR2, PC5300, soDIMM 200-pin, 64Mx8, CL5, 1 GB, 1 x 1 GB, DDR2, 667 MHz, 200-pin SO-DIMM

Transcend 1024MB, DDR2, PC5300, soDIMM 200-pin, 64Mx8, CL5. Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 5

Specification

Features

CAS latency
5
Internal memory
1 GB
Memory layout (modules x size)
1 x 1 GB
Internal memory type
DDR2
Memory clock speed
667 MHz
Memory form factor
200-pin SO-DIMM
Memory bus
64 bit
Memory voltage
1.8 V