What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilising a smaller footprint.
For support call us at
+442037470227
Item Overview
Delivery Options
Return & Warranty
Reviews
Description
Specification
Media
Reviews
Loading...
Description
Product Features:
- 250 GB mSATA Serial ATA
- Read speed: 550 MB/s
- Write speed: 520 MB/s
- V-NAND MLC
- Hardware encryption 256-bit AES
- TRIM support
Samsung 860 EVO mSATA 250 GB Serial ATA V-NAND MLC
860 EVO, 250 GB, mSATA, 3-CORE MGX 3D-VNAND
Samsung 860 EVO, 250 GB, mSATA, 550 MB/s, 6 Gbit/s
Samsung 860 EVO. SSD capacity: 250 GB, SSD form factor: mSATA, Read speed: 550 MB/s, Write speed: 520 MB/s, Data transfer rate: 6 Gbit/s, Component for: PC/notebook
Specification
Features
Security algorithms
256-bit AES
SSD form factor
mSATA
SSD capacity
250 GB
Interface
Serial ATA
Memory type
V-NAND MLC
Component for
PC/notebook
Hardware encryption
Data transfer rate
6 Gbit/s
Read speed
550 MB/s
Write speed
520 MB/s
Controller type
Samsung MJX
DevSlp (device sleep) support
TRIM support
Mean time between failures (MTBF)
1500000 h
Power
Power consumption (max)
4.5 W
Operational conditions
Operating temperature (T-T)
0 - 70 °C
Operating shock
1500 G
Weight & dimensions
Width
29.9 mm
Depth
50.8 mm
Height
3.85 mm
Weight
8.5 g
Packaging data
Package type
Box