Name: Samsung MV-2V1G4/US - 1 GB - DDR2 SDRAM - 800 M memory module 1 x 1 GB 800 MHz
Brand: Samsung
SKU: MV-2V1G4
Price: 46.18 GBP

Samsung

Samsung MV-2V1G4 Memory Module Computer Component

MV-2V1G4/US - 1 GB - DDR2 SDRAM - 800 M

Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.

A computer's memory which is directly accessible to the CPU.

How the overall memory of the product is put together, defined by the number of modules and the size.

The type of internal memory such as RAM, GDDR5.

The frequency at which the memory (e.g. RAM) runs.

What this product is used as a part of (component for).

Design of the memory e.g. 240-pin DIMM, SO-DIMM.

ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.

The voltage (V) of the memory in the device.

Type of memory in the device e.g. DDR3, SRAM (Static RAM).

Samsung MV-2V1G4/US - 1 GB - DDR2 SDRAM - 800 M. Component for: PC/Server, Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory clock speed: 800 MHz, Memory form factor: 240-pin DIMM, CAS latency: 6

Samsung MV-2V1G4/US - 1 GB - DDR2 SDRAM - 800 M, 1 GB, 1 x 1 GB, DDR2, 800 MHz, 240-pin DIMM

Samsung MV-2V1G4 Memory Module Computer Component

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Samsung MV-2V1G4/US - 1 GB - DDR2 SDRAM - 800 M memory module 1 x 1 GB 800 MHz

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