Name: Samsung 2GB DDR3-1333 SO-DIMM memory module 1 x 2 GB 1333 MHz
Brand: Samsung
SKU: M471B5673EH1-CH9
Price: 328.04 GBP

Samsung

Samsung M471B5673EH1-CH9 Memory Module Computer Component

2GB DDR3-1333 SO-DIMM

Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.

A computer's memory which is directly accessible to the CPU.

How the overall memory of the product is put together, defined by the number of modules and the size.

The type of internal memory such as RAM, GDDR5.

The frequency at which the memory (e.g. RAM) runs.

What this product is used as a part of (component for).

Design of the memory e.g. 240-pin DIMM, SO-DIMM.

Samsung 2GB DDR3-1333 SO-DIMM. Component for: Notebook, Internal memory: 2 GB, Memory layout (modules x size): 1 x 2 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 9

Samsung 2GB DDR3-1333 SO-DIMM, 2 GB, 1 x 2 GB, DDR3, 1333 MHz, 204-pin SO-DIMM

Samsung M471B5673EH1-CH9 Memory Module Computer Component

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Samsung 2GB DDR3-1333 SO-DIMM memory module 1 x 2 GB 1333 MHz

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