Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
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Description
Product Features:
- Include a Register for enhancing Clock, command and control signals
- Error correction available by added 8 bit parity signals
- Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC
- PC/Server 8 GB DDR4 2666 MHz
- RDIMM 1 x 4 GB
- CAS latency: 19
- 1.2 V
- ECC
Samsung M393A1G40EB2-CTD memory module 8 GB 1 x 4 GB DDR4 2666 MHz ECC
8 GB RDIMM, 288 pin, 2666 MHz, (1G x 4) x 18, 1R x 4
Samsung M393A1G40EB2-CTD, 8 GB, 1 x 4 GB, DDR4, 2666 MHz, RDIMM
Samsung M393A1G40EB2-CTD. Component for: PC/Server, Internal memory: 8 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: RDIMM, CAS latency: 19, ECC
Specification
Features
Buffered memory type
Registered (buffered)
CAS latency
19
Internal memory
8 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR4
Memory clock speed
2666 MHz
Component for
PC/Server
Memory form factor
RDIMM
ECC
Yes
Memory ranking
1
Memory voltage
1.2 V
Logistics data
Harmonized System (HS) code
84733020