Name: Samsung M378T5663EH3-CE6 memory module 2 GB 1 x 2 GB DDR2 667 MHz
Brand: Samsung
SKU: M378T5663EH3-CE6
Price: 46.18 GBP

Samsung

Samsung M378T5663EH3-CE6 Memory Module Computer Component

M378T5663EH3-CE6

Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.

A computer's memory which is directly accessible to the CPU.

How the overall memory of the product is put together, defined by the number of modules and the size.

The type of internal memory such as RAM, GDDR5.

The frequency at which the memory (e.g. RAM) runs.

ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.

Hardware and software that connects the main memory to the memory controller in computer systems. Originally, general-purpose buses like VMEbus and the S-100 bus were used, but to reduce latency, modern memory buses are designed to connect directly to DRAM chips, and thus are designed by chip standards bodies such as JEDEC.

The voltage (V) of the memory in the device.

Type of memory in the device e.g. DDR3, SRAM (Static RAM).

Samsung M378T5663EH3-CE6. Internal memory: 2 GB, Memory layout (modules x size): 1 x 2 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, CAS latency: 5

Samsung M378T5663EH3-CE6, 2 GB, 1 x 2 GB, DDR2, 667 MHz

Samsung M378T5663EH3-CE6 Memory Module Computer Component

Item Overview

Delivery Options

Return & Warranty

Reviews

Loading...

Description

Product Features:

Samsung M378T5663EH3-CE6 memory module 2 GB 1 x 2 GB DDR2 667 MHz

Specification

Features

Other features

Media