For support call us at
+442037470227
Item Overview
Delivery Options
Return & Warranty
Reviews
Description
Specification
Media
Reviews
Loading...
Description
Product Features:
- DDR4 functionality and operations supported as
- defined in the component data sheet
- 260-pin, small-outline dual in-line memory module
- (SODIMM)
- Fast data transfer rates: PC4-3200, PC4-2666, or
- PC4-2400
- 4GB (512 Meg x 64)
- V DD = 1.20V (NOM)
- V PP = 2.5V (NOM)
- V DDSPD = 2.5V (NOM)
- Nominal and dynamic on-die termination (ODT) for
- data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die V REFDQ generation and calibration
- Single-rank
- On-board I 2 C serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Terminated control command and address bus
- Laptop 4 GB DDR4 3200 MHz
- 260-pin SO-DIMM 1 x 4 GB
- CAS latency: 22
- 1.2 V
Micron MTA4ATF51264HZ-3G2 memory module 4 GB 1 x 4 GB DDR4 3200 MHz
4GB (x64, SR) 260-Pin, DDR4, SODIMM
Micron MTA4ATF51264HZ-3G2, 4 GB, 1 x 4 GB, DDR4, 3200 MHz, 260-pin SO-DIMM
Micron MTA4ATF51264HZ-3G2. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22
Specification
Features
CAS latency
22
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR4
Memory clock speed
3200 MHz
Component for
Laptop
Memory form factor
260-pin SO-DIMM
ECC
Memory ranking
1
Memory voltage
1.2 V
Lead plating
Gold
Operational conditions
Operating temperature (T-T)
0 - 95 °C
Sustainability
Sustainability certificates
RoHS
Weight & dimensions
Width
69.7 mm
Depth
2.5 mm
Height
30.1 mm