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Description
Product Features:
- DDR4 functionality and operations supported as
- defined in the component data sheet
- 260-pin, small-outline dual in-line memory module
- (SODIMM)
- Fast data transfer rates: PC4-3200, PC4-2666 or
- PC4-2400
- 16GB (2 Gig x 72)
- V DD = 1.20V (NOM)
- V PP = 2.5V (NOM)
- V DDSPD = 2.5V (NOM)
- Nominal and dynamic on-die termination (ODT) for
- data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die V REFDQ generation and calibration
- Dual-rank
- On-board I 2 C temperature sensor with integrated serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Terminated control, command, and address bus
- Laptop 16 GB DDR4 2666 MHz
- 260-pin SO-DIMM 1 x 16 GB
- CAS latency: 19
- 1.2 V
- ECC
Micron MTA18ASF2G72HZ-2G6E1 memory module 16 GB 1 x 16 GB DDR4 2666 MHz ECC
16GB (x72, ECC DR), 260-Pin, DDR4, SODIMM
Micron MTA18ASF2G72HZ-2G6E1, 16 GB, 1 x 16 GB, DDR4, 2666 MHz, 260-pin SO-DIMM
Micron MTA18ASF2G72HZ-2G6E1. Component for: Laptop, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, ECC
Specification
Features
CAS latency
19
Internal memory
16 GB
Memory layout (modules x size)
1 x 16 GB
Internal memory type
DDR4
Memory clock speed
2666 MHz
Component for
Laptop
Memory form factor
260-pin SO-DIMM
ECC
Memory ranking
2
Memory voltage
1.2 V
Module configuration
2048M x 72
Lead plating
Gold
Certification
REACH
Operational conditions
Operating temperature (T-T)
0 - 95 °C
Sustainability
Sustainability certificates
RoHS
Weight & dimensions
Width
69.6 mm
Depth
3.7 mm
Height
30 mm