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IBM 90Y4555 Memory Module Computer Component

Product Name: 4GB DDR3

Brand:IBM

Part Number (MPN): 90Y4555

Categories: Memory Modules

CPIN:674079

£113.57
Per unit, single order
Ordering multiple units? Get a custom quote.

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Description

Product Features:

  • 4 GB DDR3 1333 MHz
  • 1 x 4 GB
  • CAS latency: 9
  • 1.35 V
  • ECC

IBM 4GB DDR3 memory module 1 x 4 GB 1333 MHz ECC

4GB (1x4GB, 1Rx4, 1.35V), PC3L-10600, CL9, ECC, DDR3, 1333MHz, VLP, RDIMM

- DDR3 memory for Intel® Xeon® 5500/5600 and 7500-based System x® and BladeCenter® servers enables increased system performance and increased memory capacity.
- DDR3 offers increased performance over DDR2 memory, plus lower power consumption (1.5 V and 1.35 V).
- Flexibility in memory DIMM types (RDIMM, UDIMM), density (up to 16 GB), and ranks (single, dual, quad).
- IBM memory is compatibility tested and tuned for optimal system performance.

Customers continue to look for ways to increase their return on investment on their IT investments and continue to drive system performance. This includes delivering more virtual machines as well as increased performance from the DB-based applications. Virtualization demands maximum memory to run the most-efficient virtual environments, and database and transaction processing applications need maximum memory capacity and bandwidth. Customers need to deliver increased performance for their applications.

IBM offers a complete DDR3 memory portfolio for System x and BladeCenter servers that will help improve the performance of your workloads. Many applications will see immediate performance benefits with more memory. The IBM DDR3 portfolio includes RDIMMs with advanced error correction for reliability, performance and maximum memory capacity. This includes both 1.5 V and 1.35 V offerings to maximize workload performance and energy efficiency. IBM also offers 1.5 V and 1.35 V UDIMMS with basic error correction.

IBM 4GB DDR3, 4 GB, 1 x 4 GB, DDR3, 1333 MHz

IBM 4GB DDR3. Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, CAS latency: 9, ECC

Specification

Features

CAS latency
9
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR3
Memory clock speed
1333 MHz
ECC
Memory voltage
1.35 V