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Hynix HMP112S6EFR6C-Y5 Memory Module Computer Component

Product Name: 1GB DDR2 CL5

Brand:Hynix

Part Number (MPN): HMP112S6EFR6C-Y5

Categories: Memory Modules

CPIN:1998222

£12.06
Per unit, single order
Ordering multiple units? Get a custom quote.

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Description

Product Features:

  • Notebook 1 GB DDR2 667 MHz Dual-channel
  • 200-pin SO-DIMM 1 x 1 GB
  • CAS latency: 5
  • 1.8 V

Hynix 1GB DDR2 CL5 memory module 1 x 1 GB 667 MHz

200pin Unbuffered DDR2-667 SDRAM SO-DIMMs based on 1Gb version E, 128Mx64, CL5

This Hynix unbuffered Small Outline Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version E based Unbuffered DDR2 SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is suitable for easy interchange and addition.
- JEDEC standard Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply.
- All inputs and outputs are compatible with SSTL_1.8 interface.
- Posted CAS.
- Programmable CAS Latency 3,4,5, and 6.
- OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination).
- Fully differential clock operations (CK & CK).
- Programmable Burst Length 4 / 8 with both sequential and interleave mode.
- Auto refresh and self refresh supported.
- 8192 refresh cycles / 64ms.
- Serial presence detect with EEPROM.
- DDR2 SDRAM Package: 60 ball(x8), 84 ball(x16) FBGA.
- 67.60 x 30.00 mm form factor.
- RoHS compliant & Halogen-free.

Hynix 1GB DDR2 CL5, 1 GB, 1 x 1 GB, DDR2, 667 MHz, 200-pin SO-DIMM

Hynix 1GB DDR2 CL5. Component for: Notebook, Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 5

Specification

Features

Buffered memory type
Unregistered (unbuffered)
CAS latency
5
Internal memory
1 GB
Memory layout (modules x size)
1 x 1 GB
Internal memory type
DDR2
Memory clock speed
667 MHz
Component for
Notebook
Memory form factor
200-pin SO-DIMM
Memory channels
Dual-channel
Memory ranking
2
Memory voltage
1.8 V
Module configuration
128M x 64
Certification
RoHS

Operational conditions

Operating temperature (T-T)
0 - 65 °C
Storage temperature (T-T)
-50 - 100 °C
Storage relative humidity (H-H)
5 - 95%

Weight & dimensions

Width
67.7 mm
Depth
3.8 mm
Height
30 mm