Name: DELL SNP6VDNYC/8VXR memory module 8 GB 1 x 8 GB DDR4 3200 MHz ECC
Brand: DELL
SKU: SNP6VDNYC/8VXR
Price: 162.3 GBP

DELL

DELL SNP6VDNYC/8VXR Memory Module Computer Component

SNP6VDNYC/8VXR

Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.

A computer's memory which is directly accessible to the CPU.

How the overall memory of the product is put together, defined by the number of modules and the size.

The type of internal memory such as RAM, GDDR5.

The frequency at which the memory (e.g. RAM) runs.

What this product is used as a part of (component for).

Design of the memory e.g. 240-pin DIMM, SO-DIMM.

ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.

The voltage (V) of the memory in the device.

Product has a built-in light source for its illuminating.

DELL SNP6VDNYC/8VXR. Component for: PC/Server, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 288-pin DIMM, CAS latency: 24, ECC

DELL SNP6VDNYC/8VXR, 8 GB, 1 x 8 GB, DDR4, 3200 MHz, 288-pin DIMM

DELL SNP6VDNYC/8VXR Memory Module Computer Component

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DELL SNP6VDNYC/8VXR memory module 8 GB 1 x 8 GB DDR4 3200 MHz ECC

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